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Flash Memory
DRAM Modules
Embedded Peripherals
Aetina
E1.S 4TS2-P
  • E1.S 4TS2-P 첫번째 상세이미지 썸네일

E1.S 4TS2-P

PCIe Gen. 4x4, NVMe 1.4
iCell technology for power loss protection
Stable sustained performance
LDPC ECC engine supported
Thermal Throttling management
제품상세정보테이블
데이터시트 file1 Innodisk_E1.S_4TS2-P_Datasheet.pdf
file2 첨부파일을 클릭하시면 다운받으실 수 있습니다!
제품상세정보

Specifications:

Model Name E1.S 4TS2-P
Form Factor E1.S
Flash Type 3D TLC
Capacity 400GB~3.2TB
Sequential R/W (MB/sec, max.) 6,900/4,650
Max. Power Consumption 10.9W
Max. Channels 8
Thermal Sensor Y
External DRAM Buffer Y
H/W Write Protect N
Dimension (WxLxH/mm) 5.9mm: 31.5 x 111.5 x 5.9 mm
9.5mm: 33.75 x 118.75 x 9.5 mm
15mm: 33.75 x 118.75 x 15 mm
Vibration 20G@7~2000Hz
Shock 1500G@0.5ms
MTBF >3 million hours
Storage Temperature -40°C ~ +85°C

Order Information:

Operation Temp. 400GB 800GB 1.6TB 3.2TB
Standard Grade (0°C ~ +70°C) DSE1S-400DP2KCAEFP% DSE1S-800DP2KCAEFP% DSE1S-1T6DP2KCAEFP% DSE1S-3T2DP2KCAEFP%
Industrial Grade (-40°C ~ +85°C) DSE1S-400DP2KWAEFP% DSE1S-800DP2KWAEFP% DSE1S-1T6DP2KWAEFP% DSE1S-3T2DP2KWAEFP%
Operation Temp.
Standard Grade (0°C ~ +70°C)
Industrial Grade (-40°C ~ +85°C)

Operation temperature based on temperature obtained from S.M.A.R.T.
%: Non-existent=5.9mm; H=9.5mm enclosure; H1=15mm enclosure
E1.S 4TS2-P specifications are subject to change.