데이터시트 | Innodisk_E1.S_4TS2-P_Datasheet.pdf |
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Model Name | E1.S 4TS2-P |
Form Factor | E1.S |
Flash Type | 3D TLC |
Capacity | 400GB~3.2TB |
Sequential R/W (MB/sec, max.) | 6,900/4,650 |
Max. Power Consumption | 10.9W |
Max. Channels | 8 |
Thermal Sensor | Y |
External DRAM Buffer | Y |
H/W Write Protect | N |
Dimension (WxLxH/mm) | 5.9mm: 31.5 x 111.5 x 5.9 mm 9.5mm: 33.75 x 118.75 x 9.5 mm 15mm: 33.75 x 118.75 x 15 mm |
Vibration | 20G@7~2000Hz |
Shock | 1500G@0.5ms |
MTBF | >3 million hours |
Storage Temperature | -40°C ~ +85°C |
Operation Temp. | 400GB | 800GB | 1.6TB | 3.2TB |
Standard Grade (0°C ~ +70°C) | DSE1S-400DP2KCAEFP% | DSE1S-800DP2KCAEFP% | DSE1S-1T6DP2KCAEFP% | DSE1S-3T2DP2KCAEFP% |
Industrial Grade (-40°C ~ +85°C) | DSE1S-400DP2KWAEFP% | DSE1S-800DP2KWAEFP% | DSE1S-1T6DP2KWAEFP% | DSE1S-3T2DP2KWAEFP% |
Operation Temp. |
Standard Grade (0°C ~ +70°C) |
Industrial Grade (-40°C ~ +85°C) |
Operation temperature based on temperature obtained from S.M.A.R.T.
%: Non-existent=5.9mm; H=9.5mm enclosure; H1=15mm enclosure
E1.S 4TS2-P specifications are subject to change.