데이터시트 | Innodisk_E3_S_4TS2-P_Datasheet.pdf |
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Model Name | E3.S 4TS2-P |
Form Factor | E3.S |
Flash Type | 3D TLC |
Capacity | 400GB~12.8TB |
Sequential R/W (MB/sec, max.) | 6,000/3,500 |
Max. Power Consumption | TBD |
Max. Channels | 8 |
Thermal Sensor | Y |
External DRAM Buffer | Y |
TCG Opal | Y |
H/W Write Protect | N |
Dimension (WxLxH/mm) | 76 x 112.75 x 7.5 |
Vibration | 20G@7~2000Hz |
Shock | 1500G@0.5ms |
MTBF | >3 million hours |
Storage Temperature | -40°C ~ +85°C |
Operation Temp. | 400GB | 800GB | 1.6TB | 3.2TB | 6.4TB | 12.8TB |
Standard Grade (0°C ~ +70°C) | DSE3S-400DP2KCAEFP | DSE3S-800DP2KCAEFP | DSE3S-1T6DP2KCAEFP | DSE3S-3T2DP2KCAEFP | DSE3S-6T4DP2KCAEFP | DSE3S-12TDP2KCAEFP |
Industrial Grade (-40°C ~ +85°C) | DSE3S-400DP2KWAEFP | DSE3S-800DP2KWAEFP | DSE3S-1T6DP2KWAEFP | DSE3S-3T2DP2KWAEFP | DSE3S-6T4DP2KWAEFP | DSE3S-12TDP2KWAEFP |
Operation Temp. |
Standard Grade (0°C ~ +70°C) |
Industrial Grade (-40°C ~ +85°C) |
Operation temperature based on temperature obtained from S.M.A.R.T.
E3.S 4TS2-P specifications are subject to change